3

Electron trapping by excited microvoids does not give rise to a Staebler–Wronski effect

Year:
2005
Language:
english
File:
PDF, 157 KB
english, 2005
4

The prefactor of the dc conductivity in amorphous semiconductors

Year:
1987
Language:
english
File:
PDF, 150 KB
english, 1987
6

The field dependence of the dc current in amorphous semiconductors

Year:
1985
Language:
english
File:
PDF, 157 KB
english, 1985
10

Theory of 3d Transition Metal Defects in 3C-SiC

Year:
1997
File:
PDF, 632 KB
1997
11

Theoretical Models for DX Deep Donor States Based on Ab Initio Total Energy Calculations

Year:
1994
Language:
english
File:
PDF, 1.38 MB
english, 1994
12

The Atomic Stucture of Mn4 Clusters in Silicon

Year:
1995
File:
PDF, 386 KB
1995
22

Metastability of the Ali-AlSi Pair in Silicon?

Year:
1994
File:
PDF, 311 KB
1994
23

Electronic DC Transport in a-Si:H

Year:
1995
Language:
english
File:
PDF, 1002 KB
english, 1995
25

The Statistical Shift Model for the Meyer-Neldel Rule

Year:
2001
Language:
english
File:
PDF, 759 KB
english, 2001
32

The Impact of a Long-Ranged Random Potential on the Transport Properties of Amorphous Semiconductors

Year:
1992
Language:
english
File:
PDF, 727 KB
english, 1992
33

Theory Of 3 d Transition Metal Defects In 3C SiC

Year:
1996
Language:
english
File:
PDF, 346 KB
english, 1996